Performance Analysis of a Ge/Si Core/Shell Nanowire Field-Effect Transistor
نویسندگان
چکیده
منابع مشابه
Performance Study and Analysis of Heterojunction Gate All Around Nanowire Tunneling Field Effect Transistor
In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details. The proposed device has been structured using Germanium for source regionand Silicon for channel and drain regions. Kane's band-to-band tunneling model hasbeen used to account for the amount of band-to...
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متن کاملSimulation study of the performance of a biologically sensitive field effect transistor
The transformation of biochemical information into a physical or chemical signal is the basic idea behind a biosensor. The efficient detection of charged biomolecules by biosensor with appropriate device has caught tremendous research interest in the present decade. The present work is related to the simulation study of the performance of a functionalized surface of a biologically sensitive fie...
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ژورنال
عنوان ژورنال: Nano Letters
سال: 2007
ISSN: 1530-6984,1530-6992
DOI: 10.1021/nl062596f